スポンサーリンク
Department of Materials Science and Engineering, Seoul National University, Seoul 151-742, Korea | 論文
- Reducing the Thermal Budget of Solid Phase Crystallization of Amorphous Si Film Using Si_Ge_ Seed Layer
- Device Characteristics of Polycrystalline Si_Ge_ Thin Film Transistors Grown from Si_2H_6 and GeH_4 Source Gases
- New Method of Evaluating the Crystallization Activation Energy of Ge2Sb2Te5 by In situ Resistance Measurement
- High Speed Phase Change Random Access Memory with (Ge1Sb2Te4)0.9(Sn1Bi2Te4)0.1 Complete Solid Solution
- Simulating technetium-99m cerebral perfusion studies with a three-dimensional Hoffman brain phantom: Collimator and filter selection in SPECT neuroimaging
- Effects of Metal Electrode on the Electrical Performance of Amorphous InGaZnO Thin Film Transistor
- Growth of Less Bowed GaN Epitaxial Layers on Sapphire Substrates by Formation of Low-Temperature GaN Buffer Layer with Columnar Microstructure
- Inhomogeneity-Induced Carrier Transport of Chemical Vapor Deposited Graphene on HfO2 at Low Temperatures
- Erratum: ``Effects of Metal Electrode on the Electrical Performance of Amorphous In--Ga--Zn--O Thin Film Transistor''