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Department of Materials Physics,Faculty of Engineering Science,Osaka University | 論文
- Photoreflectance and Photoluminescence Study of (GaAs)_m/(AlAs)_5 (m=3-11)Superlattices: Direct and Indirect Transition
- Recovery of (411)A Superflat Interfaces in GaAs/Al_Ga_As Quantum Wells Grown on (411)A GaAs Substrate by Molecular Beam Epitaxy
- Analyses of 2D Electron Transport at a GaAs/AlGaAs Interface : B-5: GaAs IC
- Sharp Transmission Coefficient in GaAs/AlAs Resonant Tunneling Diodes with (411) A Superflat Interfaces Grown by Molecular Beam Epitaxy