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Department of Frontier Materials, Nagoya Institute of Technology | 論文
- Stress and Strain of GaAs on Si Grown by MOCVD Using Strained Superlattice Intermediate Layers and a Two-Step Growth Method
- Synthesis of Carbon Nanofibers from Carbon Particles by Ultrasonic Spray Pyrolysis of Ethanol
- Polarized Reflectance Spectroscopy and Spectroscopic Ellipsomentry Determination of the Optical Anisotropy of Gallium nitride on Sapphire
- 2P330 Photochromism of Anabaena sensory rhodopsin(42. Sensory signal transduction,Poster Session,Abstract,Meeting Program of EABS & BSJ 2006)
- Photoluminescence Studies of Hydrogen-Passivated Al_Ga_As Grown on Si Substrate by Metalorganic Chemical Vapor Deposition
- Effects of H Plasma Passivation on the Optical and Electrical Properties of GaAs-on-Si
- Electrical Transport Properties of GaSb Grown by Molecular Beam Epitaxy
- Optical and Structural Quality of GaAs Epilayers from Gallium, Bismuth Mixed Solvents by Liquid Phase Epitaxy
- 2P-216 ロドプシンの細胞質側ループを組み込んだ古細菌ロドプシンの研究(光生物-視覚・光受容,第47回日本生物物理学会年会)
- 2TA2-04 ロドプシンの細胞質側ループを組み込んだ古細菌ロドプシンの研究(光生物-視覚・光受容,第47回日本生物物理学会年会)
- 1P-258 ppRにウシロドプシンの第3ループを組み込んだキメラタンパク質の研究(光生物・視覚,光受容(1),第46回日本生物物理学会年会)
- 1P-251 アナベナセンサリーロドプシンとトランスデューサータンパク質との相互作用の全反射赤外分光法による研究(光生物・視覚,光受容(1),第46回日本生物物理学会年会)
- 1P-228 古細菌型ロドプシンのカーボンナノチューブへの内包(光生物-視覚・光受容,第47回日本生物物理学会年会)
- 1TP2-08 古細菌型ロドプシンのカーボンナノチューブへの内包(光生物-視覚・光受容,第47回日本生物物理学会年会)
- 1P-253 ロドプシンのカーボンナノチューブへの内包(光生物・視覚,光受容(1),第46回日本生物物理学会年会)
- 1P421 FTIR Study of the O Intermediate in the Complex between pharaonis Phoborhodopsin and Its Cognate Transducer(17. Light driven system,Poster Session,Abstract,Meeting Program of EABS &BSJ 2006)
- Investigation of Electrical and Optical Properties of Phosphine/Hydrogen-Plasma-Exposed In_Ga_P Grown on Si SubStrate : Semiconductors
- Electrical Characteristics of GaAs Bonded to Si Using SeS_2 Technique
- 2P306 H-D unexchangeable N-H group of Trp182 in Bacteriorhodopsin(41. Proton and ion pumping,Poster Session,Abstract,Meeting Program of EABS & BSJ 2006)
- Hydrogen Plasma Passivation and Improvement of the Photovoltaic Properties of a GaAs Solar Cell Grown on Si Substrate
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