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Department of Electronics Engineering, National Chiao Tung University | 論文
- Scheduling Delay Minimization for Non-UGS Data in Multi-Channel HFC Network(Fiber-Optic Transmission for Communications)
- Precursor ISI-Free Frame Synchronization for DMT VDSL System(Special Issue on Outstanding Papers from APCC 2001)
- Reduced Reverse Narrow Channel Effect in Thin SOI nMOSFET's
- High Performance Sub-0.1μm Dynamic Threshold MOSFET Using Indium Channel Implantation
- Efficient Improvement of Hot-Carrier-Induced Device's Degradation for Sub-0.1μm Complementary Metal-Oxide-Semiconductor Field-Effect-Transistor Technology
- Investigation of Inversion C-V Reconstruction for Long-Channel MOSFETs with Leaky Dielectrics using Intrinsic Input Resistance Approach
- APPLICATION OF LAYERED INORGANIC MATERIALS IN RECTIFICATION OF ELECTRO-OPTICAL PROPERTIES OF NEMATIC LIQUID CRYSTALS AND POLYMER-ENCAPSULATED LIQUID CRYSTALS
- Electro-Optical and Capacitive Characteristics of Stratified Polymer/Liquid Crystal Composite Devices under DC Electric Field
- Modeling Geometry-Dependent Floating-Body Effect using Body-Source Built-In Potential Lowering for Scaled SOI CMOS
- Layout Optimization of AlGaN/GaN HEMTs for High-power Applications
- 2-Bit Lanthanum Oxide Trapping Layer Nonvolatile Flash Memory
- Effect of Shape and Size on Electron Transition Energies of InAs Semiconductor Quantum Dots
- Epidemiologic Study of Epilepsy in Young Singaporean Men
- Investigation of Matching Performance for Uniaxial Strained PMOSFETs
- Dependence of Electron Mobility on Doped Impurities
- Investigation of Random Dopant Fluctuation for Multi-Gate MOSFETs Using Analytical Solution of 3-D Poisson's Equation
- Investigation of Analog Performance for Uniaxial Strained PMOSFETs
- Improved Low Temperature Characteristics of Raised Source and Drain (RSD) Si_Ge_x PMOSFET's
- Fabrication of High T_c 2223 (Bi, Pb)SrCaCuO Single-Phase Films by Single-Target RF Magnetron Sputtering and Postannealing
- Effects of Base Oxide and Silicon Composition on Charge Trapping in HfSiO/SiO_2 High-k Gate Stacks