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Department of Electronics, Laboratory of Semiconductor Materials, Royal Institute of Technology | 論文
- LoW-Temperature Metal-Organic Vapor-Phase Epitaxy Growth and Performance of 1.3-μm GaInNAs/GaAs Single Quantum Well Lasers
- Systematics of Electrical Conductivity across InP to GaAs Wafer-Fused Interfaces
- All-Epitaxial Single-Fused 1.55 μm Vertical Cavity Laser Based on an InP Bragg Reflector