LoW-Temperature Metal-Organic Vapor-Phase Epitaxy Growth and Performance of 1.3-μm GaInNAs/GaAs Single Quantum Well Lasers
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2002-02-28
著者
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Sundgren Petrus
Department Of Microelectronics And Information Technology Royal Institute Of Technology (kth)
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PLAINE Glenn-Yves
Department of Microelectronics and Information Technology, Royal Institute of Technology (KTH)
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ASPLUND Carl
Department of Microelectronics and Information Technology, Royal Institute of Technology (KTH)
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MOGG Sebastian
Department of Microelectronics and Information Technology, Royal Institute of Technology (KTH)
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HAMMAR Mattias
Department of Microelectronics and Information Technology, Royal Institute of Technology (KTH)
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Hammar Mattias
Department Of Microelectronics And Information Technology Royal Institute Of Technology (kth):zarlin
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Mogg Sebastian
Department Of Microelectronics And Information Technology Royal Institute Of Technology (kth)
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Asplund Carl
Department Of Microelectronics And Information Technology Royal Institute Of Technology (kth)
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Plaine Glenn-yves
Department Of Microelectronics And Information Technology Royal Institute Of Technology (kth)
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MOGG Sebastian
Department of Electronics, Laboratory of Semiconductor Materials, Royal Institute of Technology
関連論文
- LoW-Temperature Metal-Organic Vapor-Phase Epitaxy Growth and Performance of 1.3-μm GaInNAs/GaAs Single Quantum Well Lasers
- All-Epitaxial Single-Fused 1.55 μm Vertical Cavity Laser Based on an InP Bragg Reflector