All-Epitaxial Single-Fused 1.55 μm Vertical Cavity Laser Based on an InP Bragg Reflector
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概要
- 論文の詳細を見る
We have realised an all-epitaxial 1.55 μm vertical cavity laser by employing a single wafer-fusion step. The laser structure is fabricated by fusing a 32-period p-doped (C) AlGaAs/GaAs top mirror onto a half-cavity structure consisting of a 50-period n-doped (Si) GaInAsP/InP bottom mirror and a 9 quantum well GaInAsP-active material. Laser mesas are fabricated using a wet etching procedure for the top mirror. The top mirror also contains an AlAs layer for oxidation for current confinement. The lasers operate pulsed at temperatures up to 40℃ and at pulse lengths of 10 μs up to 5℃. The minimum threshold current density at room temperature is 1.8 kA/cm^2 for a device diameter of 55 μm. Compared to nonoxidised laser diodes, the threshold current is markedly decreased in oxidised laser diodes.
- 社団法人応用物理学会の論文
- 1999-02-28
著者
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Bentell Jonas
Department Of Electronics Laboratory Of Semiconductor Materials Royal Institute Of Technology
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Rapp Stefan
Department Of Electronics Laboratory Of Semiconductor Materials Royal Institute Of Technology
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MOGG Sebastian
Department of Microelectronics and Information Technology, Royal Institute of Technology (KTH)
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HAMMAR Mattias
Department of Microelectronics and Information Technology, Royal Institute of Technology (KTH)
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Hammar M
Royal Inst. Technol. (kth) Kista Swe
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Hammar Mattias
Department Of Microelectronics And Information Technology Royal Institute Of Technology (kth):zarlin
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Mogg S
Royal Inst. Technol. (kth) Kista Swe
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Mogg Sebastian
Department Of Microelectronics And Information Technology Royal Institute Of Technology (kth)
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WENNEKES Frank
Department of Electronics, Laboratory of Semiconductor Materials, Royal Institute of Technology
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SALOMONSSON Fredrik
Department of Electronics, Laboratory of Semiconductor Materials, Royal Institute of Technology
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STREUBEL Klaus
Mitel Semiconductor AB
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STREUBEL Klaus
Department of Electronics, Laboratory of Semiconductor Materials, Royal Institute of Technology
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Wennekes Frank
Department Of Electronics Laboratory Of Semiconductor Materials Royal Institute Of Technology
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Salomonsson Fredrik
Department Of Electronics Laboratory Of Semiconductor Materials Royal Institute Of Technology
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MOGG Sebastian
Department of Electronics, Laboratory of Semiconductor Materials, Royal Institute of Technology
関連論文
- LoW-Temperature Metal-Organic Vapor-Phase Epitaxy Growth and Performance of 1.3-μm GaInNAs/GaAs Single Quantum Well Lasers
- Systematics of Electrical Conductivity across InP to GaAs Wafer-Fused Interfaces
- All-Epitaxial Single-Fused 1.55 μm Vertical Cavity Laser Based on an InP Bragg Reflector