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Department of Electronics, Hiroshima Institute of Technology | 論文
- Diffusion Barrier Effect of Ultra-Thin Photo-Nitrided a-Si:H Overlayer on SnO_2/Glass Substrate
- Impurity Diffusion Barrier Effect of Ultra-Thin Plasma-Nitrided a-Si:H Overlayer on SnO_2/Glass Substrate
- Diffusion of constituent Atoms in P-type a-Si:H / SnO_2 Interfaces : Surfaces, Interfaces and Films
- Damage Effects in Silicon Surface Barrier Detectors with 0.5-2 MeV Protons
- Damage Effects in Silicon Surface Barrier Detectors by 0.5-1.5 MeV Electrons
- Negative Resistance of Si(Li) Detectors Irradiated by Energetic Electrons
- Li-Drifted Silicon Surface Barrier Detectors Irradiated by 0.5-1.5 MeV Electrons
- Realization of Wide-Band Directivity with Three Microphones (Special Section on Advanced Signal Processing Techniques for Analysis of Acoustical and Vibrational Signals)
- Hydrogen Plasma Durability of Chemically Treated SnO_2 Thin Films
- Determination of Localized State Density Distribution in Glow Discharge Amorphous Silicon : B-1: AMORPHOUS SILICON AND SOLAR CELLS