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Department of Electronics, Faculty of Engineering, Nagoya University | 論文
- Effect of a Polyimide Coat on the Layer Structure in a Surface-Stabilized Ferroelectric Liquid Crystal Cell
- New Wavelength-Demultiplexing InGaAsP/InP Photodiodes : III-4: III-V COMPOUND SOLAR CELLS AND DETECTORS
- Measurement of Diffusion Coefficient and Surface Recombination Velocity for p-InGaAsP Grown on InP
- InGaAsP/InP Native Oxide Stripe Lasers
- InGaAsP/InP Double-Heterostructure Photodiodes
- Radial Distributions of Z-Current and Electron Density in a Screw-Pinch Discharge
- Selective MOCVD Growth of GaAs on Si Substrate with Superlattice Intermediate Layers
- Deep Levels in GaAs Grown Using Superlattice Intermediate Layers on Si Substrates by MOCVD
- Mechnism of MOCVD Growth for GaAs and AlAs
- Solid Composition and Growth Rate of Ga_Al_xAs Grown Epitaxially by MOCVD
- Ellipsometric Studies on Sputter-Damaged Layer in n-InP
- Stress and Strain of GaAs on Si Grown by MOCVD Using Strained Superlattice Intermediate Layers and a Two-Step Growth Method
- Kinetics of Phase Separation in Ternary Alloys
- Kinetics of Phase Separation in Fe-Cr-Mo Ternary Alloys
- Simplified Dual Channel Optical Trarnsmission Using Integrated Light Emitters and Photodetectors
- Measurements of the CF Radical in DC Pulsed CF_4/H_2 Discharge Plasma Using Infrared Diode Laser Absorption Spectroscopy
- Spatial Distribution of SiH_3 Radicals in RF Silane Plasma
- SiH_3 Radical Density in Pulsed Silane Plasma
- Diffusion Coefficient and Reaction Rate Constant of the SiH_3 Radical in Silane Plasma
- Measurement of the SiH_3 Radical Density in Silane Plasma using Infrared Diode Laser Absorption Spectroscopy : Techniques, Instrumentations and Measurement