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Department of Electronic Engineering, National Taiwan Institute of Technology | 論文
- An Analytical Fully-Depleted Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect-Transistor Model Considering the Effects of Self-Heating, Source/Drain Resistance, Impact-Ionization, and Parasitic Bipolar Junction Transistor
- A Simple, Analytical and Complete Deep-Submicrometer Fully Depleted Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect-Transistor Model Considering Velocity Overshoot
- Temperature Dependence of Quantized States in Strained-Layer In_Ga_As/GaAs Single Quantum Well
- Raman Scattering of Fe_xRuS_2 Mixed Crystals
- Raman Characterizations of Ruthenium Dichalcogenides
- Window-Based Methods for Parameter Estimation of Markov Random Field Images
- Temperature Dependence of Quantized States in a GaAs/Al_Ga_As Asymmetric Triangular Quantum Well Heterostructure
- Quadrature Hartley VCO and Injection-Locked Frequency Divider
- A New Post-stress Drain Current Model for Surface-channel p-Type Metal-Oxide-Semiconductor-Field-Effect-Transistors
- A Compact Buried-Channel Lightly-Doped-Drain Metal-Oxide-Semiconductor-Field-Effect-Transistor Model
- Second Harmonic Electroreflectance Study of AlGaAs-GaAs Asymmetric Triangular and Coupled Double Quantum Wells
- Temperature Dependence in In_xGa_As/GaAs Double Quantum Well by Contactless Electroreflectance Spectroscopy
- Effects of Ni Silicidation on the Shallow p^+n Junctions Formed by BF^+_2 Implantation into Thin Polycrystalline-Si Films on Si Substrates
- Optical Characteristics of GaN Films Overgrown on Wet-etched GaN Templates
- Photoluminescence characterization of type II Zn_Mn_Se/ZnSe_Te_ multiple-quantum-well structures
- Infrared Spectroscopy of Hg_Zn_xTe Alloys