スポンサーリンク
Department of Electrical and Electronic Engineering, Faculty of Technology, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan | 論文
- Characteristics of Light Emission by Ballistic Electron Excitation in Nanocrystalline Silicon Device Formed on a p-Type Substrate
- Evidence of Enlarged Drift Length in Nanocrystalline Porous Silicon Layers by Time-of-Flight Measurements
- Analysis of Electron Transport in Surface-Passivated Nanocrystalline Porous Silicon
- High Performance Electroluminescence from Nanocrystalline Silicon with Carbon Buffer