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Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576 | 論文
- Source/Drain Engineering for In0.7Ga0.3As N-Channel Metal--Oxide--Semiconductor Field-Effect Transistors: Raised Source/Drain with In situ Doping for Series Resistance Reduction
- Source Engineering for Tunnel Field-Effect Transistor: Elevated Source with Vertical Silicon--Germanium/Germanium Heterostructure
- Effect of Composition Disorders on Band Structure and Optical Gain Spectra of GaInNAs/GaAs Quantum Wells
- AlGaN/GaN Metal--Oxide--Semiconductor High-Electron-Mobility Transistors with a High Breakdown Voltage of 1400 V and a Complementary Metal--Oxide--Semiconductor Compatible Gold-Free Process