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Department of Electrical Engineering, Toyota College of Technology | 論文
- Raman Scattering of InGaAsP Lattice-Matched to GaAs in the Region of Immiseibility
- Diffusion Coefficient Obtained from Arrival-Time Spectrum
- Raman Scattering Study of InGaN Grown by Metalorganic Vapor Phase Epitaxy on (0001) Sapphire Substrates : Optical Properties of Condensed Matter
- MOCVD Growth and Characterization of (Al_xGa_)_yIn_P/GaAs
- A New AsH_3 Cracking Method for the MOCVD Growth of InGaAs
- InP MESFET Grown by MOCVD
- Ion Transport Analysis by Extended Wannier Theory : Effect of Ion Density Gradient
- Raman Intensity of Phonon Modes in InGaAsP Quaternary Alloys Grown on (100) InP in the Region of Immiscibility
- Raman Scattering Study of InGaAsP Quaternary Alloys Grown on InP in the Immiscible Region