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Department of Electrical Engineering, Korea University | 論文
- Region similarity based edge detection for motion estimation in H.264/AVC
- Photocurrent and Photoluminescence Characteristics of Networked GaN Nanowires
- Piezoelectric and Dielectric Properties of 0.05Pb(Al_Nb_)O_3-0.95Pb(Zr_Ti_)O_3 Ceramics Doped with Nb_2O_5 and MnO_2
- Low Temperature Sintering of ZnO-Doped 0.01Pb(Mg_W_)O_3-0.41Pb(Ni_Nb_)O_3-0.35PbTiO_3-0.23PbZrO_3 Ceramics
- Structural and Optical Properties of ZnO Nanowires Synthesized from Ball-Milled ZnO Powders
- High frequency gate bias response of carbon nanotube field effect transistor
- A Latch-up Immunized Lateral Trench Insulated Gate Bipolar Transistor with a p+ Diverter Structure for Smart Power Integrated Circuit : Semiconductors
- A Small-Sized Lateral Trench Electrode Insulated Gate Bipolar Transistor for Improving Latch-up and Breakdown Characteristics : Semiconductors
- Interictal Epileptiform Discharges Relate to ^1H-MRS-detected Metabolic Abnormalities in Mesial Temporal Lobe Epilepsy
- Differentiation of Mouse P19 Embryonic Carcinoma Stem Cells Injected into an Empty Zebrafish Egg Chorion in a Microfluidic Device
- Radial Tilt Compensation Method of Holographic Disk Drive
- A New Design of Polynomial Neural Networks in the Framework of Genetic Algorithms(Biocybernetics, Neurocomputing)
- Publisher's Note: ``A New Lateral Trench Electrode Insulated Gate Bipolar Transistor with p+ Diverter for Superior Electrical Characteristics''
- Publisher's Note: ``A Latch-up Immunized Lateral Trench Insulated Gate Bipolar Transistor with a p+ Diverter Structure for Smart Power Integrated Circuit''
- Publisher's Note: ``A Small-Sized Lateral Trench Electrode Insulated Gate Bipolar Transistor for Improving Latch-up and Breakdown Characteristics''
- A New Histogram Modification Method for Stereoscopic Image Enhancement
- State Dependent Dwell Time Switching for Discrete-Time Stable Systems(Systems and Control)
- A New Silicon-on-Insulator Lateral Insulated-Gate Bipolar Transistor with Dual-Channel Structure : Semiconductors
- A New Lateral Trench Electrode Insulated Gate Bipolar Transistor with p+ Diverter for Superior Electrical Characteristics
- An Independent Sleep Scheduling Protocol for Increasing Energy-Efficiency in Wireless Body Area Networks