A New Silicon-on-Insulator Lateral Insulated-Gate Bipolar Transistor with Dual-Channel Structure : Semiconductors

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概要

• 論文の詳細を見る

• To improve the latch-up and forward voltage drop properties of the silicon-on-insulator (SOI) lateral insulated-gate bipolar transistor (LIGBT), a new SOI LIGBT structure is proposed and fabricated. The new device employs a dual-channel structure in order to enable more electrons to flow into the n-drift layer and to improve the latch-up characteristic.

• 社団法人応用物理学会の論文
• 2001-12-15

著者

• Sung Woong-je

  Department Of Electrical Engineering Korea University

• LEE Yong-Il

  Department of Electrical Engineering, Korea University

• CHOI Woo-Beom

  Department of Electrical Engineering, Korea University

• SUNG ManYoung

  Department of Electrical Engineering, Korea University

関連論文

• A New Silicon-on-Insulator Lateral Insulated-Gate Bipolar Transistor with Dual-Channel Structure : Semiconductors

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