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Department of Electrical Engineering, Faculty of Engineering, The University of Tokyo | 論文
- InP Layer Grown on (001) Silicon Substrate by Epitaxial Lateral Overgrowth
- Microchannel Epitaxy of GaAs from Parallel and Nonparallel Seeds : Structure and Mechanical and Thermal Properties of Condensed Matter
- AlSb Compositional Nonuniformity Induced by Different Ga-Al Exchange Modes in the Melt Growth of Al_xGa_Sb
- Three-dimensional Calculation of Residual Stress in InP Layers Grown by Microchannel Epitaxy on Si Substrates