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Department of Electrical, Electronics and Computer Engineering, Waseda University | 論文
- Formation of Bi2212 Phase via Bi2201 Phase in Liquid-Phase Epitaxial Growth
- Effect of Y Substitution for Ca in Bi_2Sr_2CaCu_2O_ Superconducting Films Prepared by Liquid Phase Epitaxial Method
- X-ray Photoelectron Spectroscopy Study in Bi_2Sr_2Ca_Nd_xCu_2O_
- Effect of Ni Substitution for Cu in 110 K Phase of (Bi, Pb)-Sr-Ca-Cu-O Superconductors
- Effect of Y Substitution for the Ca Site in the 110 K Phase of (Bi, Pb)-Sr-Ca-Cu-O Superconductors
- XPS Study on the Formation Process of the High-T_c Phase in the Bi-Pb-Sr-Ca-Cu-O System
- XPS Study of Bi-Sr-Ca-Cu-O Superconducting Thin Films Prepared by the rf-Sputtering Method
- Experimental Studies on the Electronic Structure of Pb_Eu_xTe
- Comparison of Optical Properties of GaN/AlGaN and InGaN/AlGaN Single Quantum Wells
- Comparison of Optical Properties in GaN/AlGaN and InGaN/AlGaN Single Quantum Wells
- Optical Properties of an InGaN Active Layer in Ultraviolet Light Emitting Diode
- Quantum-Confined Stark Effect in an AlGaN/GaN/AlGaN Single Quantum Well Structure
- Infrared Lattice Absorption in Wurtzite GaN
- Exciton Spectra of Cubic and Hexagonal GaN Epitaxial Films
- Influence of Internal Electric Field on the Recombination Dynamics of Localized Excitons in an InGaN Double-Quantum-Well Laser Diode Wafer Operated at 450nm
- An infant with severe atopic dermatitis and progressive hepatomegaly due to fatty liver
- Tunneling Spectroscopy of the Band Edge Structure of SnTe
- Electronic Properties of RF-Sputtered Unhydrogenated Amorphous Silicon-Germanium Alloy
- Tunneling Characteristics on Sputtered Niobium Films
- Tunneling Study of the Valence Band Structure of Pb_Eu_xTe