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Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute | 論文
- Resonant Terahertz Detection Based on High-electron-mobility Transistor with Schottky Source/Drain Contact
- Plasma Instability and Terahertz Generation in HEMTs Due to Electron Transit-Time Effect(THz Devices,Heterostructure Microelectronics with TWHM2005)
- Analysis of Tunneling-Injection Transit-Time Effects and Self-Excitation of Terahertz Plaslma Oscillations in High-Electron-Mobility Transistors : Semiconductors
- Strongly Enhanced Phosphor Efficiency in GaInN White Light-Emitting Diodes Using Remote Phosphor Configuration and Diffuse Reflector Cup
- Graphene Tunneling Transit-Time Terahertz Oscillator Based on Electrically Induced p-i-n Junction
- Resonant terahertz photomixing in integrated HEMT-QWIP device
- Plasma Instability and Nonlinear Terahertz Oscillations in Resonant-Tunneling Structures
- Resonant Terahertz Detector Utilizing Plasma Oscillations in Two-Dimensional Electron System with Lateral Schottky Junction
- Genetic Algorithm for Innovative Device Designs in High-Efficiency III-V Nitride Light-Emitting Diodes