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Department of Electric and Computer Engineering Nagoya Institute of Technology | 論文
- MOCVD Growth of GaAs_P_x (x=0-1) and Fabrication of GaAs_P_ LED on Si Substrate
- MOCVD Growth of GaAs_P_ on Si Substrate
- AlGaAs/GaAs DH Lasers on Si Substrates Grown Using Super Lattice Buffer Layers by MOCVD
- Mechnism of MOCVD Growth for GaAs and AlAs
- Solid Composition and Growth Rate of Ga_Al_xAs Grown Epitaxially by MOCVD
- Ellipsometric Studies on Sputter-Damaged Layer in n-InP
- Motion Detecting Artificial Retina Model by Two-Dimensional Multi-Layered Analog Electronic Circuits
- Annealing of GaN-InGaN Multi Quantum Wells : Correlation between the Bandgap and Yellow Photoluminescence
- Laser-Induced Damage Threshold and Surface Processing of GaN at 400 nm Wavelength
- Equivalent Circuit Parameters of Surface-Acoustic-Wave Interdigital Transducers for ZnO/Diamond and SiO_2/ZnO/Diamond Structures
- Low-Loss Diamond Surface Acoustic Wave Devices Using Small-Grain Poly-Crystalline Diamond
- Growth Style of Bi_4Ti_3O_ Thin Films on CeO_2/Ce_Zr_O_2 Buffered Si Substrates
- Realization of GaAS/AlGaAs Lasers on Si Substrates Using Epitaxial Lateral Overgrowth by Metalorganic Chemical Vapor Deposition : Optics and Quantum Electronics
- First Room-Temperature Continuous-Wave Operation of Self-Formed InGaAs Quantum Dot-Like Laser on Si substrate Grown by Metalorganic Chemical Vapor Deposition
- AlGaAs/GaAs Laser Diodes with GaAs Islands Active Region on a Si Substrate with Higher Characteristic Temperature
- Huge Facial Schwannoma Extending Into the Middle Cranial Fossa and Cerebellopontine Angle Without Facial Nerve Palsy
- Characterization of Metal/GaAs Interfaces by Monoenergetic Positron Beam
- Vacancy-Type Defects in Ion-Implanted Diamonds Probed by Monoenergetic Positron Beams
- Electron Energy Control in Inductively Coupled Plasma Employing Multimode Antenna
- Thin Film Detection Employing Frequency Shift in Sheath Current Oscillation