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Department of Computer Science and Electronics, Kyushu Institute of Technology | 論文
- Influence of SiC Cover Layer of Si Substrate on Properties of Cubic SiC Films Prepared by Hydrogen Plasma Sputtering
- Infrared Absorption Properties of Nanocrystalline Cubic SiC Films
- Behaviors of Carbon at Initial Stages of SiC Film Grown on Thermally Oxidized Si Substrate
- Observation of the Formation Processes of Hollow Voids at the Interface between SiC Film and Si Substrate
- Low-Temperature Growth of Oriented Silicon Carbide on Silicon by Reactive Hydrogen Plasma Sputtering Technique
- Study of Hydrogen Ion Bombardment Effect on the Growth of Si:H Films Prepared by Hydrogen Plasma Sputtering of Silicon
- Study of the Growth Mechanism of Nanocrystalline Si:H Films Prepared by Reactive Hydrogen Plasma Sputtering of Silicon
- Temperature-Dependent Reaction of rf Hydrogen Plasma with Silicon
- Polynomially Fast Parallel Algorithms for Some P-Complete Problems (Special Section on Discrete Mathematics and Its Applications)
- Critical Current Characteristics in Superconducting Y-Ba-Cu-O Prepared by the Melt Process
- Study of Sputtering Mechanism of Silicon with Hydrogen Plasma Controlled by Magnetic Field
- Time-of-Flight Photocarrier Mobility in Langmuir-Blodgett Films of Regioregular Poly(3-hexylthiophene)
- Real-Time Blood Velocity Measurements in Human Retinal Vein Using the Laser Speckle Phenomenon
- Real-Time Measurement of Human Optic Nerve Head and Choroid Circulation, Using the Laser Speckle Phenomenon
- Electrochemomechanical Deformation of Polyaniline Films
- Response of Chemomechanical Deformation in Polyaniline Film on Variety of Anions
- MEASUREMENT OF OPTIC NERVE HEAD CIRCULATION : COMPARISON OF LASER SPECKLE AND HYDROGEN CLEARANCE METHODS
- Mass Spectroscopy of Vaporized (SN)_x Polymer
- Ultrasonic Attenuation Due to Localized Relaxation in Cubic Yttria-Stabilized Zirconia
- Estimation of Critical Current Density in a Melt-Processed Superconducting Y-Ba-Cu-O Using AC and DC Inductive Methods