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Department Of Superconductivity University Of Tokyo | 論文
- 29pXL-10 SmMn_2Ge_2の磁性と構造(遷移金属・希土類)(領域3)
- Nonlinear Current Dependence of Potential Barrier for Flux Creep in Superconducting La-Sr-Cu-O Single Crystal
- A binary-decision-diagram-based two-bit arithmetic logic unit on a GaAs-based regular nanowire network with hexagonal topology
- Orbitally Ordered State in Y_Ca_xTiO_3 (0 < x ≤ 0.5)(Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Properties)
- Crystal Structure and Magnetic Properties of the Quasi-One-Dimensional Quantum Spin System Cu_2Cl_4・H_8C_4SO_2
- AlGaN/GaN MIS構造におけるC-V特性の解釈(半導体のプロセス・デバイス(表面,界面,信頼性),一般)
- 電気化学的手法によるInP多孔質構造の形成と高感度化学センサへの応用(半導体のプロセス・デバイス(表面,界面,信頼性),一般)
- In-gap Electronic States Responsible for the Excellent Thermoelectric Properties of Ni-based Half-Heusler Alloys
- Electronic Structure Characteristics of MBE (molecular beam epitaxy)-Grown Diluted Magnetic Semiconductor Ga_Cr_xN Films
- Hard X-ray Photoemission Spectroscopy of Temperature-Induced Valence Transition in EuNi_2(Si_Ge)_2(Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Properties)
- 高Al組成AlGaNの表面特性と深い電子準位(窒化物及び混晶半導体デバイス)
- 高Al組成AlGaNの表面特性と深い電子準位(窒化物及び混晶半導体デバイス)
- 20pWA-7 Ce(Fe_Co_x)_2 の高圧下磁化測定
- Cyclotron Resonance and Magnetic Resonance in GdSb (Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties)
- Al_2O_3/AlGaN/GaNおよびAl_2O_3/n-GaN構造における界面特性(化合物半導体デバイス及び超高周波デバイス/一般)
- Al_2O_3/AlGaN/GaNおよびAl_2O_3/n-GaN構造における界面特性(化合物半導体デバイス及び超高周波デバイス/一般)
- Magnetization Process of an S = 1/2 Tetramer Chain with Ferromagnetic-Ferromagnetic-Antiferromagnetic-Antiferromagnetic Bond Alternating Interactions
- Structural and Electronic Interplay in the Gap Formation in CeRhAs_Sb_x (0 ≤ x ≤ 1)(Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Properties)
- Hole-doping and Pressure Effects on the Metal-Insulator Transition in Single Crystals of Y_Ca_xTiO_3(0.37 ≤ x ≤ 0.41)(Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Properties)
- Hole-doping and Pressure Effects on the Metal-Insulator Transition in Single Crystals of Y_Ca_xTiO_3 (0.37≦x≦0.41)
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