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Department Of Research And Development Nichia Chemical Industries Ltd. | 論文
- InGaN/GaN/AlGaN-Based Laser Diodes Grown on GaN Substrates with a Fundamental Transverse Mode
- Violet InGaN/GaN/AlGaN-Based Laser Diodes with an Output Power of 420 mW
- High-Power, Long-Lifetime InGaN/GaN/AlGaN-Based Laser Diodes Grown on Pure GaN Substrates
- InGaN/GaN/AlGaN-Based Laser Diodes with Modulation-Doped Strained-Layer Superlattices
- High-Power, Long-Lifetime InGaN Multi-Quantum-Well-Structure Laser Diodes
- InGaN Multi-Quantum-Well-Structure Laser Diodes with Cleaved Mirror Cavity Facets
- InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
- High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures
- Cd-Doped InGaN Films Grown on GaN Films
- Si-Doped InGaN Films Grown on GaN Films
- P-GaN/N-InGaN/N-GaN Double-Heterostructure Blue-Light-Emitting Diodes
- Si- and Ge-Doped GaN Films Grown with GaN Buffer Layers
- Hole Compensation Mechanism of P-Type GaN Films
- Thermal Annealing Effects on P-Type Mg-Doped GaN Films
- High-Power GaN P-N Junction Blue-Light-Emitting Diodes
- Highly P-Typed Mg-Doped GaN Films Grown with GaN Buffer Layers
- Measurement of Flow-Mediated Vasodilation of the Brachial Artery : A Comparison of Measurements in the Seated and Supine Positions
- Pycnogenol^【○!R】, French Maritime Pine Bark Extract, Augments Endothelium-Dependent Vasodilation in Humans
- Biexciton Luminescence from GaN Epitaxial Layers
- Spectral Electroluminescence Mapping of a Blue InGaN Single Quantum Well Light-Emitting Diode