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Department Of Physics Science University Of Tokyo:(permanent Address)toshiba Manufacturing Engineeri | 論文
- RF Selfbias Voltage and Sheath Width in Inductively Coupled Chlorine Plasma
- Microloading Effect in Highty Selective Si0_2 Contact Hole Etching Employing Inductively Coupled Plasma
- Effect of Magnetic Field to Etching Characteristics of Inductively Coupled Plasma ( Plasma Processing)
- High Rate and Highly Selective SiO_2 Etching Employing Inductively Coupled Plasma
- RF Self-Bias Characteristics in Inductively Coupled Plasma
- Laser-Enhanced Ionization Signals Obtained with Microwave Resonant Cavities