スポンサーリンク
Department Of Physical Electronics Hiroshima University:(present Address) Central Research Labs. Sha | 論文
- Incidence Angle Dependence in Hydrogen Plasma Processing of Semiconductor Surfaces : Beam Induced Physics and Chemistry
- Electric Field Effect on Subband State Transitions Peaks in the Photoluminescence from a GaAlAs Quantum Well Structure
- Characterization of Nitrogen-Doped ZnSe and ZnS_Se_ Films Grown by Metal-Organic Vapor-Phase Epitaxy : III-V Compound Semiconductors Devices and Materials(Solid State Devices and Materials 1)
- Lattice-Mismatch Enhanced Diffusion at a ZnSe/GaAs Interface - Increase of Thermal Stability in a Lattice-Matching System
- Control of ZnSe Film Stoichiometry at ZnSe/GaAs Interface Grown by MOCVD
- High Output Power (>20 W) and High Quantum Efficiency in a Photopumped ZnSe/ZnSSe Blue Laser Operating at Room Temperature
- Near-Room-Temperature Photopumped Blue Lasers in ZnS_xSe_/ZnSe Multilayer Structures
- Ultrafast Response Evaluation of Virtual Excitation by Off-Resonant Optical Pulse Mixing in GaAs/AlGaAs Quantum Well Structures
- High-Speed Intensity Modulation by Quantum-Confined Field Effect Combined with Modulation of Injection Current in Light-Emitting Triodes
- Optical Nonlinearity Caused by Charge-Induced Field Screening in DC-Biased Quantum Well Structures
- Dynamic Switching Characteristics of Photoluminescence by an Electric Field in AlGaAs Quantum Well Structures
- A 140 ps Optical Pulse Generation by Field-Induced Gain Switching in a Photo-Excited Quantum Well Laser
- Electroreflectance Spectra and Field-Induced Variation in Refractive Index of a GaAs/AlAs Quantum Well Structure at Room Temperature
- Transient Response of Photoluminescence for Electric Field in a GaAs/Al_Ga_As Single Quantum Well : Evidence for Field-Induced Increase in Carrier Life Time