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Department Of Materials Engineering School Of Engineering The University Of Tokyo | 論文
- Anomalous positive V_ shift in HfAlO_x MOS gate stacks
- Study of La Concentration Dependent V_ Shift in Metal/HfLaOx/Si Capacitors
- ナノピラー構造体が電気浸透流に及ぼす影響の評価
- Au/(Fe-Co)の人工格子の垂直磁気異方性
- Performance and Degradation in Single Grain-size Pentacene Thin-Film Transistors
- Field-Dependent Mobility of Highly Oriented Pentacene Thin-Film Transistors
- OJ-347 Relation between Muscle Function and Early Dynamics of Oxygen Uptake at the Onset of Constant Workload Exercise(Exercise Test/Cardiac Rehabilitation 4 (IHD) : OJ42)(Oral Presentation (Japanese))
- Hydrogen Assisted Intergranular Crack Propagation during Environmental Embrittlement in an Al-Zn-Mg-Cu Alloy
- Ge/GeO_2 Interface Control with High-Pressure Oxidation for Improving Electrical Characteristics
- Mobility Variations in Mono- and Multi-Layer Graphene Films
- Low Temperature Phosphorus Activation in Germanium through Nickel Germanidation for Shallow n^+/p Junction
- A Significant Shift of Schottky Barrier Heights at Strongly Pinned Metal/Germanium Interface by Inserting an Ultra-Thin Insulating Film
- Grain Size Increase and Field-Effect Mobility Enhancement of Pentacene Thin Films Prepared in a Low-Pressure H_2 Ambient
- Evidence of Electron Trapping Center at Pentacene/SiO_2 Interface
- Origin of Structural Phase Transformation of SiO_2-doped HfO_2
- Advanced Characterization of High-k Gate Stack by Internal Photo Emission (IPE) : Interfacial Dipole and Band Diagram in Al/Hf(Si)O_2/Si MOS Structure
- Effect of Ultra-thin Al_2O_3 Insertion on Fermi-level Pinning at Metal/Ge Interface
- Thermally Robust Germanium MIS Gate Stacks with LaYO_3 Dielectric Film
- Direct Evidence of GeO Volatilization from GeO_2 Films and Impact of Its Suppression on GeO_2/Ge MIS Characteristics
- Reduction of Bias-Induced Threshold Voltage Shift in Pentacene Field Effect Transistors by Interface Modification and Molecular Ordering