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Department Of Electrophysics National Chiao Tung University | 論文
- Influence of Sapphire Nitridation on Properties of Indium Nitride Prepared by Metalorganic Vapor Phase Epitaxy
- Deep Hole Teaps Created by Gamma-Ray lrradiation of GaInP : Semiconductors
- Gamma-Ray Induced Deep Electron Traps in GalnP : Semiconductors
- Temperature and Annealing Effects on Photoluminescence Spectra of (InAs)_1/(GaP)_2 Superlattices Grown by Solid-Source Molecular Beam Epitaxy
- Reduction of Spontaneous Surface Segregation in (InP)_2/(GaP)_2 Quantum Wells Grown on Tilted Substrates
- Ordering Reduction in In_Ga_P Grown by Solid Source Molecular Beam Epitaxy
- Optical Nonlinearity and Ultrafast-Carrier Dynamics of a Strained Quantum-Well Saturable Bragg Reflector
- Generation of THz Radiation from Resonant Absorption in Strained Multiple Quantum Wells in a Magnetic Field : Optics and Quantum Electronics
- Efficient Terahertz Radiation Generation from a Bulk InAs Mirror as an Intracavity Terahertz Radiation Emitter
- THz Radiation from Intracavity Saturable Bragg Reflector in Magnetic Field with Self-Started Mode-Locking by Strained Saturable Bragg Reflector
- High Average Power Mode Locked Ti:Sapphire Laser with Intracavity Continuous-Wave Amplifier and Strained Saturable Bragg Reflector
- Improvement of Reliability of Metal-Oxide Semiconductor Field-Effect Transistors with N_2O Nitrided Gate Oxide and N_2O Polysilicon Gate Reoxidation
- Long-Term Photocapacitance Decay Behavior in Undoped GaN : Semiconductors
- Comparative Study of Schottky Diode Characteristics in Ni, Ta and Ni/Ta Metal Contact Schemes on n-GaN : Semiconductors
- A High-Temperature Thermodynamic Model for Metalorganic Vapor Phase Epitaxial Growth of InGaN
- Raman and X-Ray Studies of InN Films Grown at Different Temperatures by Metalorganic Vapor Phase Epitaxy
- An Elucidation of Solid Incorporation of InGaN Grown by Metalorganic Vapor Phase Epitaxy
- Growth and X-ray Characterization of an InN Film on Sapphire Prepared by Metalorganic Vapor Phase Epitaxy
- Crystalline Structure Changes in GaN Films Grown at Different Temperatures
- Deep Electron Trapping Centers in Te-doped (Al_x Ga_)_ In_ P (x=0.5) Layers Grown by Metal-Organic Chemical Vapor Deposition(Semiconductors)