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Department Of Electrical Engineering The National University Of Singapore | 論文
- Negative Bias Temperature Instability on Plasma-Nitrided Si]icon Dioxide Film : Semiconductors
- A Strong Temperature-Dependent Hole Direct Tunneling Current in p^+-Gate/pMOSFET with Ultra-Thin Gate Oxide
- Reduction of Radiation-Induced Leakage Currents in Thin Oxides by Application of a Low Post-Irradiation Gate Bias