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Department Of Electrical Engineering The National Defense Academy | 論文
- Sintering of Submicron Powders Prepared by Ball Milling : A: Applications and Fundamentals
- Calcium Requirement and Inhibitor Spectrum for Intracellular HIV Type 1 gp160 Processing in Cultured HeLa Cells and CD4^+ Lymphocytes: Similarity to Those of Viral Envelope Glycoprotein Maturase
- Dynamic Characteristics of BaTiO_3 Ceramic Semiconductors with a Multilayer Structure
- Febrication of Multilayer Positive Temperature Coefficient Resistor by Electrode Bonding Method : Ferroelectrics
- Surface Acoustic Wave Binary Phase Shift Keying System for Time-Division Multiple Access
- Activation of nuclear factor κB at the onset of ossification of the spinal ligaments
- A Phase Shift Keying Communication System Using SAW Devices : SAW and Communication Devices
- An Implementation of Multiple-Valued Logic and Fuzzy Logic Circuits Using 1.5 V Bi-CMOS Current-Mode Circuit (Special Issue on Multiple-Valued Logic)
- Conparison of FourMicrobial Enzymes in Clostrideia and Bacteroides Isolated from Human Feces
- Measurement of the Liquid Surface Level Using a Leaky Lamb Wave Transducer : F: FERROELECTRIC MATERIALS
- Surface Acoustic Waves in High-T_c Superconducting Thin Films on Piezoelectric PbTiO_3 Films
- Degradation of Piezoelectric Properties at Resonant Operational Mode by a Large Input Power
- STUDIES ON THE PARASITE FAUNA OF THE EASTERN CARRION CROW, CORVUS CORONE ORIENTALIS EVERSMAN, AND THE JAPANESE JUNGLE CROW, CORVUS MACRORHYNCHOS JAPONENSIS BONAPARTE
- An Ultrasonic Modulator for 16-Valued Frequency Shift Keying : SAW and Communication Devices
- Boltzmann Machine Processor Using Single-Bit Operation (Special Section on JTC-CSCC '92)
- Optical Modulation Using Mode Conversion from Surface Acoustic Wave to Bulk Wave : O: Optoelectronics
- Properties of an Interconnected Porous Pb(Zr, Ti)O_3 Ceramic
- Annealing of Excimer-Laser-Ablated BaTiO_3 Thin Films
- Deposition of BaTiO_3 Thin Films by ArF Excimer Laser Ablation
- Bias Voltage Dependence of the Detected Voltage in MOM Devices