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Department Of Electrical Engineering Faculty Of Science And Technology Kinki University | 論文
- Tight-Binding Calculation of Electronic Structures of InNAs Ordered Alloys
- Electronic Structure of GaP_N_x Alloys Determined Using Pseudopotentials and Gaussian Orbitals
- Electronic Structures of Wurtzite GaN, InN and Their Alloy Ga_In_xN Calculated by the Tight-Binding Method
- Valence-Band-Edge Energy of Group-III Nitride Alloy Semiconductors
- Stromal Sarcoma with Features of Giant Cell Malignant Fibrous Histiocytoma
- A Case of Breast Carcinoma with Cartilaginous and Osseous Metaplasia
- Spectral Change of Polymer Film Containing Poly(3-Alkylthiophene) with Temperature and Its Application as Optical Recording Media : Chemistry (incl. Physical process)
- High-Field Electron Transport in a-Si:H
- Doping Effect in Solution of Poly(3-Alkylthiophene)
- Absorption and Emission Spectral Changes in a Poly(3-Alkylthiophene) Solution with Solvent and Temperature
- Optical Properties of Solution of Polythiophene Derivatives as Functions of Alkyl Chain Length, Concentration and Temperature
- High-Field Electron Transport and Hot Electron Phenomena in Hydrogenated Amorphous Silicon Films
- Effect of Phosphorus Doping and Deposition Temperature on the Deep-Level Transient Spectra in a-Si:H
- Deep Level Transient Spectroscopy Study of Staebler-Wronski Effect in a-Si:H
- Negative Staebler-Wronski Effect in Undoped a-Si:H
- Saturation of Optical Degradation in a-Si:H Films with Different Morphologies : Condensed Matter
- Preparation of a-Si:H Films Resistive to the Staebler-Wronski Effect : Semiconductors and Semiconductor Devices
- Optical Degradation of a-Si:H films with Different Morphology : Semiconductors and Semiconductor Devices
- Metalorganic Vapor Phase Epitaxy of Sb-Doped ZnSe
- Deep-Level Transient Spectroscopy of Nitrogen-Doped ZnSe Grown by Metalorganic Vapor Phase Epitaxy