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Department Of Electrical Engineering And Research Center For Interface Quantum Electronics Hokkaido | 論文
- Migration-Enhanced Epitaxy of InP Using Polycrystalline InP as Phosphorus Source
- Characterization of Deep Levels in Si-Doped In_xAl_As Layers Growrn by Molecular Beam Epitaxy
- A Computer Simulation of the Recombination Process at Semiconductor Surfaces
- Correlation between Photoluminescence and Surface-State Density on GaAs Surfaces Subjected to Various Surface Treatments : III-V Compound Semiconductors Devices and Materials(Solid State Devices and Materials 1)
- In Situ Surface State Spectroscopy by Photoluminescence and Surface Current Transport for Compound Semiconductors