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Department Of Electrical And Electronic Engineering Toyohashi University Of Technology:(present)mats | 論文
- Spectroscopy of Hard X-Rays (2-15 keV) Generated by Focusing Femtosecond Laser on Metal Targets
- Realization of Two-Dimensional Growth and Suppression of Threading Dislocation Generation in (InP)_1(GaAs)_n Quaternary Strained Short-Period Superlattices Grown on GaAs
- Picosecond Pulsed X-Ray Diffraction from a Pulsed Laser Heated Si(111)
- Time-Resolved X-ray Shadowgraphy Experiment of Laser Ablation of Aluminum using Laser-Induced Picosecond Pulsed X-rays
- Laser-Induced Shock Compression of Tantalum to 1.7 TPa
- Defect-Controlled Selective Epitaxial Growth of GaP on Si by Migration-Enhanced Epitaxy under Atomic Hydrogen Irradiation
- Hardening Effect of GaP_N_x and GaAs_ N_x Alloys by Adding Nitrogen Atoms
- Control of N Content of GaPN Grown by Molecular Beam Epitaxy and Growth of GaPN Lattice Matched to Si(100) Substrate
- High-Quality GaAs_xP_/In_Ga_P Quantum Well Structure Grown on Si Substrate with a Very Few Threading Dislocations
- Effect of Hydriding on Structural Stability on Ni/Ti and Pd/Ti Multilayers
- Solid-State Amorphization in Palladium/Titanium Multilayer Films during Sputter Deposition and Postdeposition Annealing
- Lattice-Relaxation Process of(InAs)m(GaAs)n Strained Short-Period Superlattices Grown on GaAs