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Department Of Electrical And Electronic Engineering Sophia University | 論文
- 電磁オシログラフ(音の博物館)
- サヌカイト 音の出る石(音の博物館)
- Ti-mask Selective-Area Growth of GaN by RF-Plasma-Assisted Molecular-Beam Epitaxy for Fabricating Regularly Arranged InGaN/GaN Nanocolumns
- 日本科学未来館
- Perception of speaker identity and its relation to the phonological features (Speech) -- (国際ワークショップ"Asian workshop on speech science and technology")
- 音韻・韻律情報を用いた両耳融合聴課題に関する検討(言語獲得・学習,合成,生成,韻律,一般)
- Growth and Characterization of AlInN Ternary Alloys in Whole Composition Range and Fabrication of InN/AlInN Multiple Quantum Wells by RF Molecular Beam Epitaxy
- Growth of Self-Organized GaN Nanostructures on Al_20_3(0001)by RF-Radical Source Molecular Beam Epitaxy
- Two-Dimensional Growth of GaN on Various Substrates by Gas Source Molecular Beam Epitaxy Using RF-Radical Nitrogen Source
- Substrate Nitridatiorn Effects on GaN Growm on GaAs Substrates by Molecular Beam Epitaxy Using RF-Radical Nitrogen Source
- Zn Induced Layer Disordering in GaInP/AlInP Visible Multi-Quantum Well Distributed Bragg Reflector Laser Diode
- Effect of Annealing on Superconductivity in Bi-Pb-Sr-Ca-Cu-O System
- Influence of Cooling Rate on Superconducting Characteristics of Bi-Pb-Sr-Ca-Cu-O Ceramics
- Superconducting Characteristics and Microstructure of Bi-Pb-Sr-Ca-Cu-O Ceramics : Electrical Properties of Condensed Matter
- Electric Field Induced Reflection in GaInAsP/InP MQW Structure
- Electric Field-Induced Absorption in GaInAsP/InP MQW Structures Grown by LPE
- Effect of Precise Control of V/III Ratio on In-Rich InGaN Epitaxial Growth
- 1.5-1.6 μm Wavelength (100) GaInAsP/InP DH Lasers : B-3: LASER
- Low Threshold Current Density (100) GaInAsP/InP Double-Heterostructure Lasers for Wavelength 1.3 μm
- Conditions of LPE Growth for Lattice Matched GaInAsP/InP DH Lasers with(100)Substrate in the Range of 1.2-1.5 μm