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Department Of Electrical And Electronic Engineering Meijyo University | 論文
- Correlation between Dislocation Density and the Macroscopic Properties of GaN Grown by Metalorganic Vapor Phase Epitaxy
- Influence of Ohmic Contact Resistance on Transconductance in AlGaN/GaN HEMT(GaN-Based Devices,Heterostructure Microelectronics with TWHM2005)
- Growth of GaInN by Raised-Pressure Metalorganic Vapor Phase Epitaxy
- Strong Emission from GaInN/GaN Multiple Quantum Wells on High-Crystalline-Quality Thick m-Plane GaInN Underlying Layer on Grooved GaN
- Optical Absorption in Polarized Ga_In_xN/GaN Quantum Wells(Semiconductors)
- Microscopic Investigation of Al_Ga_N on Sapphire
- Stimulated Emission by Current Injection from an AlGaN/GaN/GaInN Quantum Well Device
- Direct Patterning of the Currernt Confinement Structure for p-Type Column-III Nitrides by Low-Energy Electron Beam Irradiation Treatment
- Optical Transitions of the Mg Acceptor in GaN
- Strain Modification of GaN in AlGaN/GaN Epitaxial Films
- ZrB_2 Substrate for Nitride Semiconductors
- Zirconium Diboride (0001) as an Electrically Conductive Lattice-Matched Substrate for Gallium Nitride
- Study on the Seeded Growth of AlN Bulk Crystals by Sublimation
- Edge and Self-Activated High Band Emission of ZnS_xSe_ Single Crystal Epitaxial Layers
- Thermodynamical Analyses and Luminescence Properties of Vapor-Grown ZnS_xSe_
- Photoluminescence Decay Properties of Indium Doped ZnS
- VPE Growth of ZnS Incorporating Indium on GaP
- Room-Temperature Low-Threshold Surface-Stimulated Emission by Optical Pumping from Al_Ga_N/GaN Double Heterostructure
- The Effect of Isoelectronic In-Doping on the Structural and Optical Properties of (Al)GaN Grown by Metalorganic Vapor Phase Epitaxy
- Effect on GaN/Al_Ga_N and Al_Ga_N/Al_Ga_N Quantum Wells by Isoelectronic In-Doping during Metalorganic Vapor Phase Epitaxy