スポンサーリンク
Department Of Agricultural-environmental Biology Graduate School Of Agriculture And Life Sciences Th | 論文
- Heteroepitaxial Growth of InAs on Misoriented GaAs(111)B Substrates by Molecular Beam Epitaxy
- Initial Growth Mechanism of Si on GaAs Studied by Reflection High-Energy Electron Diffraction Oscillations
- Growth Mechanism in Migration-Enhanced Epitaxy of AlAs on Misoriented GaAs(111)B Substrates
- Initial Growth Mechanism of GaAs on Si(110)
- Interaction between Genetic Effects and Soil Type in Diallel Analysis of Root Shape and Size of Japanese Radish (Raphanus sativus L.)
- Genetic Control of Root Shape at Different Growth Stages in Radish (Raphanus sativs L.)
- The Evaluation of Genotype × Environment Interactions of Citrus Leaf Morphology Using Image Analysis and Elliptic Fourier Descriptors
- Diallel Analysis of Leaf Shape Variations of Citrus Varieties Based on Elliptic Fourier Descriptors
- Diallel Analysis of Root Shape of Japanese Radish (Raphanus sativus L.) Based on Elliptic Fourier Descriptors
- Influence of PH_3 Preflow Time on Initial Growth of GaP on Si Substrates by Metalorganic Vapor Phase Epitaxy
- Structural Investigation of Metalorganic Chemical-Vapor-Deposition-Grown InGaAs Layers on Misoriented GaAs Substrates
- A Computerized Cycle Ergometer
- Quantitative Trait Loci for Rice Phyllochron in Lemont×IR36 Cross(Genetic Resources Evaluation)
- Comparison of QTLs for Early Elongation Ability between Two Floating Rice Cultivars with a Different Phylogenetic Origin
- Sublattice Rotation of GaP Grown on 2°-Misoriented Si Substrate Using Metalorganic Vapor Phase Epitaxy
- Seebeck Effects and Electronic Thermal Conductivity of IV-VI Materials
- 46 TSH RECEPTOR GENE ANALYSIS FOR CASES WITH HYPERTHYROTROPlNEMIA : INACTIVATING MUTATION (R450H) IS COMMON IN JAPANESE
- Threading Dislocations and Phase Separation in InGaAs Layers on GaAs Substrates Grown by Low-Temperature Metalorganic Vapor Phase Epitaxy
- Threading Dislocations in InGaAs CaP Layers with InGaAs Graded Layers Grown on Si Substrates
- Metalorganic Vapor Phase Epitaxy of InAs Layers on GaAs Substrates Using Low-Temperature Growth of InGaAs Graded Buffer Layers