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Department And Graduate Institute Of Electrical Engineering College Of Engineering Chang Gung Univer | 論文
- Particle Size and Morphology of Iridium Oxide Nanocrystals in Non-Volatile Memory Device
- HfO2/HfAlO/HfO2 Nanolaminate Charge Trapping Layers for High-Performance Nonvolatile Memory Device Applications
- Low-Power Switching of Nonvolatile Resistive Memory Using Hafnium Oxide