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Departamento De Instrumentacion Electronica E.t.s. Ingenieros De Telecomunication-u.p.m. Ciudad Univ | 論文
- Growth of Epitaxial Layers of In Doping GaAs by the Vapour-Phase Epitaxial Trichloride Method Using a Gallium-Indium Alloyed Source
- Indium Isoelectronic Doping Influence on Etch Pit Density in GaAs Layers Grown by Vapour Phase Epitaxy
- Trichloride Vapour Phase Epitaxial Growth of In_Ga_xAs on InP Using an In / Ga Alloy Source : Semiconductors and Semiconductor Devices