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DRAM Process Architecture Team, Memory Division, Samsung Electronics Co., Ltd. | 論文

• Robust Metal/AHO/HSG-Cylinder Capacitor Technology Using Diagonal Cell Array Scheme and Double Mold Oxide
• Robust TiN/AHO/HSG-Cylinder Capacitor for High Density DRAMs
• Robust Metal/AHO/HSG-Cylinder Capacitor Technology Using Diagonal Cell Array Scheme and Double Mold Oxide

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