スポンサーリンク
Corporate Research and Development Center, Toshiba Corporation, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan | 論文
- Effect of Interface Layers on Phase-Change Recording Material Analyzed by Hard X-ray Photoelectron Spectroscopy Method
- Local Structure Analysis and Interface Layer Effect of Phase-Change Recording Material Using Actual Media
- High-Speed Rotating-Disk Chemical Vapor Deposition Process for In-Situ Arsenic-Doped Polycrystalline Silicon Films
- Solubility in Fluorinated Medium and Thermal Properties of Europium(III) Complexes with Phosphine Oxides
- Verification of Validity of Approximated Vector Diffraction Model
- AlN Waveguide with GaN/AlN Quantum Wells for All-Optical Switch Utilizing Intersubband Transition