スポンサーリンク
Corporate Manufacturing Engineering Center, Toshiba Corporation, Yokohama 235-0017, Japan | 論文
- Selective Plasma Surface Modification of Resist for Patterning Hydrophobic and Hydrophilic Regions
- Modeling and Simulation of Arsenic-Doped-Silicon Low-Pressure Chemical Vapor Deposition
- Influence of Oxygen Addition and Wafer Bias Voltage on Bromine Atom Surface Reaction in a HBr/Ar Inductively Coupled Plasma
- Influence of Oxygen Addition and Wafer Bias Voltage on Bromine Atom Surface Reaction in a HBr/Ar Inductively Coupled Plasma (Special Issue : Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials)