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Compound Semiconductor Research Department Semiconductor Technology Division Electronics And Telecom | 論文
- Extremely Low Noise 0.15μm T-Gate AlGaAs/InGaAs Pseudomorphic HEMTs
- Low Noise Characteristics of 0.2μm Al_Ga_As/In_Ga_As/GaAs Pseudomorphic HEMTs with Wide Head T-Shaped Multifinger Gate
- Effects of Implanted Materials on Impurity-Induced Layer Disordering in Strained Ga_In_As/Ga_xIn_As_yP_/Ga_In_P/GaAs Quantum Well Structure