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College of Engineering, Osaka University | 論文
- Al Redistribution in Thermally Oxidized Si Surface
- Optical Absorption of Thermally Oxidized Si Oxide Film
- N Type Conversion of Thermally Oxidized Si Surface
- Slow Decay of Reverse Current and Noise in Field Effect on Ge P^+-N Junction
- Surface Field Effect and Noise in Ge Grain Boundary
- 1/f Noise and Channel in Ge PN Junction
- Drift Mobility of Photo-Injected Electrons in Hexane-Silicone Mixture
- Effect of Thickness on Photoconduction of Colored KCl
- Electron Bombardment Conductivity in Alkalihalide Crystals I
- Effects of Vacancies on Pulse Photoconductions in CdS Single Crystals