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Central Research Laboratoty Hitachi Ltd. | 論文
- Influence of Strain on Electrical Properties of the Ge Channel in the Modulation-Doped p-Si_Ge_/Ge/Si_Ge_x Heterostructure
- High Hole Mobility in Modulation-Doped and Strain-Controlled p-Si_Ge_/Ge/Si_Ge_ Heterostructures Fabricated Using Molecular Beam Epitaxy
- A New Pupil Filter for Annular Illumination in Optical Lithography
- Simple Calculation on Topography of Focused-Ion-Beam Sputtered Surface