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Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185 | 論文
- A Rigorous Solution of Two-Dimensional Diffraction Based on the Huygens-Fresnel Principle
- Improvement of SiO2/Si Interface Properties Utilising Fluorine Ion Implantation and Drive-in Diffusion
- Effects of Dipping in an Aqueous Hydrofluoric Acid Solution before Oxidation on Minority Carrier Lifetimes in p-Type Silicon Wafers
- Characterization of Si Layers Deposited on (100) Si Substrates by Plasma CVD and Its Application to Si HBTs
- Fabrication of an Axisymmetric Wolter Type I Mirror with a Gold Deposited Reflecting Surface
- Radiation Damage in SiO2/Si Induced by VUV Photons
- Vibrational and Rotational Energy Distributions in a Hot Cl2 Molecular Beam
- Formation Mechanism of a Monoatomic Order Surface Layer on a Sc-Type Impregnated Cathode