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Central Research Laboratory, Hamamatsu Photonics K.K. | 論文
- Bistable Optically Writable Image Memory Using Optical Feedback
- Mid-Infrared Photoluminescence from Liquid Phase Epitaxial InAs_Sb_y/InAs Multilayers
- Average Value Method:A New Approach to Practical Optical Computed Tomography for a Turbid Medium Such as Human Tissue
- Room Temperature InAs_xP_Sb_y/InAs Photodetectors with High Quantum Efficiency
- Liquid Phase Epitaxial Growth of High-Quality GaInAsSb/InAs
- Determination of the d-Tensor Components of a Single Crystal of N-Benzyl-2-methyl-4-nitroaniline
- Central in Vivo Nicotinic Acetylcholine Receptor Imaging Agents for Positron Emission Tomography (PET) and Single Photon Emission Computed Tomography (SPECT)(Functional Changes Induced by Long-Term Stimulation of Nicotinic Acetylcholine Receptors)
- AlN/GaN Near-Infrared Quantum-Cascade Structures with Resonant-Tunneling Injectors Utilizing Polarization Fields : Semiconductors
- Diode-Pumped Glass Laser (10J x 10Hz) Development
- Quasi-CW 110kW AlGaAs Laser Diode Array Module for Inertial Fusion Energy Laser Driver : Optics and Quantum Electronics
- Design and Performance of a Diode-Pumped Nd:Silica-Phosphate Glass Zig-Zag Slab Laser Amplffier for Inertial Fusion Energy : Optics and Quantum Electronics
- Thermal- and Spectral-Characteristics of High-Power Quasi-Continuous Wave 940-nm InGaAs Diode Laser Arrays
- Synthesis and evaluation of vesamicol analog (-)-o-[^C]methylvesamicol as a PET ligand for vesicular acetylcholine transporter
- InNAsSb Single Crystals with Cutoff Wavelength of 11-13.5 μm Grown by Melt Epitaxy
- Light-Emitting Diodes with a Peak Wavelength of 5.38 μm from Liquid-Phase Epitaxial Ga_ In_ Sb/InSb Heterostructures(Semiconductors)
- Room-Temperature Mid-Infrared Light-Emitting Diodes from Liquid-Phase Epitaxial InAs/InAs_Sb_/InAs_P_Sb_ Heterostructures
- InAs_Sb_y Single Crystals with Cutoff Wavelength of 8-12 μm Grown by a New Method
- Room-Temperature Operation of InAsSb/InAsPSb Photodetectors with a Cut-off Wavelength of 4.3 μm
- Influence of Sulphidation Treatment on the Performance of Mid-Infrared InAsPSb/InAs Detectors
- Optical Properties of High-Quality Ga_In_xAs_Sb_y/InAs Grown by Liquid-Phase Epitaxy