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Central Research Laboratory, Hamamatsu Photonics K.K. | 論文
- Actual Carrier Mobility Determination of GaInAsSb/InAs Grown by Liquid Phase Epitaxy
- Liquid Phase Epitaxial Growth and Characterization of High Quality GaInAsSb/InAs for Photodiodes
- High-Efficiency 894-nm Laser Emission of Laser-Diode-Bar-Pumped Cesium-Vapor Laser
- Effects of Reflective Coatings on Performance of Divergence-Narrowed External-Cavity Laser-Diode Arrays
- High-Power Operation of 1cm Laser Diode Bars on Funryu Heat Sink Cooled by Fluorocarbons
- High-Brightness Narrow-Bandwidth High-Power Laser-Diode Array Based on an External-Cavity Technique
- Characteristics of Laser Diode Bar and Stack with Jet-Type, Water-Cooled Heatsink
- Single-Wavelength 5.6kW Direct Diode Laser with a High-Efficiency Beam Combination
- Melt Epitaxial Growth of High Quality InAs_Sb_y and In_xGa_Sb single crystals with cutoff wavelength of 7-12 μm
- Growth Mode Transition in GaAs/Gap(001)
- Quantitation of Absorbers in Turbid Media Using Time-Integrated Spectroscopy Based on Microscopic Beer-Lambert Law
- Simple Subtraction Method for Determining the Mean Path Length Traveled by Photons in Turbid Media
- Efficient High-Average-Power Operation of Q-Switched Cryogenic Yb:YAG Laser Oscillator
- Colonic Tattooing Using Fluorescence Imaging with Light-Emitting Diode-Activated Indocyanine Green : A Feasibility Study
- Polarized Memory Switching in Amorphous Se Film
- Germanium- and Zinc-Doped P-type InAsSb Single Crystals with a Cutoff Wavelength of 12.5 μm
- 2-15 Physiological Response to Visual Stimuli using a Large Screen : Measurement of the Absolute Hb Concentration of Prefrontal Region by Mulch-Channel Near Infrared Spectroscopy(Proceedings of the 55th Meeting of Japan Society of Physiological Anthropolo
- 1-8 Measurement of Absolute Hb Concentration in a Prefrontal Region by Near-Infrared Time-Resolved Spectroscopy(Proceedings of the 51st Meeting of Japan Society of Physiological Anthropology)
- Etch Pit Observation of Very Thin {001}-GaAs Layer by Molten KOH
- Photoluminescence Study of (Ga, Al) As Layer Grown from Ga Solution Pre-Heated at High Temperature