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Central Research Institute Mitsubishi Materials Co. Ltd. | 論文
- A Novel Fabrication Method for Polycrystalline Silicon Thin-Film Transistors with a Self-Aligned Lightly Doped Drain Structure
- Factors Influencing the Variation of Surface Acoustic Wave Velocity in Lithium Tetraborate
- Consideration of Small Variation of Surface Acoustic Wave (SAW) Velocity in Lithium Tetraborate
- Peculiar Dielectric Behaviors on Li_2B_4O_7 Single Crystals (Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Properties)
- Mode of Occurrence and Cause of Twinning in Lithium Tetraborate Grown by Czocharalski Method
- Growth of Crack-Free 3-Inch-Diameter Lithium Tetraborate Single Crystals by Czochralski Method ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
- Growth of 3-Inch-Diameter Li_2B_4O_7 Single Crystal Using the Resistance Heating Furnace ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
- Growth of Twinned Lithium Tetraborate Crystal and its Application to Bimorph Actuator
- Growth of Ga_B_xN by Molecular Beam Epitaxy
- Nonlinear Optical Properties of Langasite Crystal
- Characterization of Defects in Li_2B_4O_7 Crystals Grown by Czochralski and Bridgman Methods
- Influence of Cluster Size on Nucleation Rate
- Warp of Czochralski Wafer with Back-Surface Polycrystalline Silicon Film