Growth of Ga_<1-x>B_xN by Molecular Beam Epitaxy
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1997-11-15
著者
-
Shiraki Hiroyuki
Mitsubishi Materials Silicon Corporation
-
Shiraki Hiroyuki
Mitsubishi Materials Co . Ltd. Central Research Institute
-
Vezin Vincent
Central Research Institute Mitsubishi Materials Co. Ltd.
-
VEZIN Vincent
Mitsubishi Materials Co,. Ltd., Central Research Institute
-
YATAGAI Satoshi
Mitsubishi Materials Co,. Ltd., Central Research Institute
-
UDA Satoshi
Mitsubishi Materials Co,. Ltd., Central Research Institute
-
Vezin V
Tokyo Univ. Agriculture And Technol. Tokyo Jpn
-
Uda Satoshi
Mitsubishi Materials Co . Ltd. Central Research Institute
-
Yatagai Satoshi
Mitsubishi Materials Co . Ltd. Central Research Institute
-
Vezin Vincent
Mitsubishi Materials Co . Ltd. Central Research Institute
関連論文
- Factors Influencing the Variation of Surface Acoustic Wave Velocity in Lithium Tetraborate
- Growth of Ga_B_xN by Molecular Beam Epitaxy
- Characterization of Defects in Li_2B_4O_7 Crystals Grown by Czochralski and Bridgman Methods
- Deep-Level Transient Spectroscopy Detection of Iron in Hydrogenated p^+ Silicon : Semiconductors