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Center for Spintronics Integrated Systems, Tohoku University, Sendai 980-8577, Japan | 論文
- Pd Layer Thickness Dependence of Tunnel Magnetoresistance Properties in CoFeB/MgO-Based Magnetic Tunnel Junctions with Perpendicular Anisotropy CoFe/Pd Multilayers
- Wave Packet Dynamics in the Spin Torque Transfer
- Damage Recovery by Reductive Chemistry after Methanol-Based Plasma Etch to Fabricate Magnetic Tunnel Junctions (Special Issue : Dry Process)
- Role of Synthetic Ferrimagnets in Magnetic Tunnel Junctions from Wave Packet Dynamics
- Design of a Nine-Transistor/Two-Magnetic-Tunnel-Junction-Cell-Based Low-Energy Nonvolatile Ternary Content-Addressable Memory
- Time-Resolved Switching Characteristic in Magnetic Tunnel Junction with Spin Transfer Torque Write Scheme
- High-Density and Low-Power Nonvolatile Static Random Access Memory Using Spin-Transfer-Torque Magnetic Tunnel Junction
- Multi-Electron Wave Packet Dynamics in Applied Electric Field
- CoNi Films with Perpendicular Magnetic Anisotropy Prepared by Alternate Monoatomic Layer Deposition
- Size Dependence of Magnetic Properties of Nanoscale CoFeB--MgO Magnetic Tunnel Junctions with Perpendicular Magnetic Easy Axis Observed by Ferromagnetic Resonance
- Fabrication of a Magnetic Tunnel Junction-Based 240-Tile Nonvolatile Field-Programmable Gate Array Chip Skipping Wasted Write Operations for Greedy Power-Reduced Logic Applications