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Center for Interdisciplinary Research, Tohoku University | 論文
- Study on Quantum Electro-Dynamics in Vertical MOSFET
- Importance of the Electronic State on the Electrode in Electron Tunneling Processes between the Electrode and the Quantum Dot
- Hydration Effects on the Microwave Dielectricity in Dry Poly(dA)-Poly(dT) DNA(Cross-disciplinary physics and related areas of science and technology)
- Sub-10nm Multi-Nano-Pillar Type Vertical MOSFET
- Design of 30nm FinFETs and Double Gate MOSFETs with Halo Structure
- Design of 30nm FinFET with Halo Structure
- Sub-10nm Multi-Nano-Pillar Type Vertical MOSFET
- Design of 30nm FinFET with Halo Structure
- Sub-10nm Multi-Nano-Pillar Type Vertical MOSFET
- Scalability of Vertical MOSFETs in Sub-10nm generation and its Mechanism(Session5A: Si Devices II)
- Atomic-Scale Characterization of Elastic Deformation of Zr-Based Metallic Glass under Tensile Stress
- Improvement of Plasticity in Pd Containing Zr-Al-Ni-Cu Bulk Metallic Glass by Deformation-Induced Nano Structure Change
- High Strength and Good Ductility of Bulk Quasicrystalline Base Alloys in Zr_Al_Ni_Cu_Pd_X System
- Future High Density Memory with Vertical Structured Device Technology
- Thermodynamic Calculation of Phase Diagram in the Bi-In-Sb Ternary System
- Solubility Product of TiN in Austenite
- A New Emission Spectrum of Au_2 in the Gas Evaporation Technique: 761-809 nm
- Field Emission Patterns from Single-Walled Carbon Nanotubes
- Magnetic Properties of Iron in Nanocapsules
- Impurity Dependence of Vacancy Formation Energy in Silicon Determined by a New Quenching Method