スポンサーリンク
Bell Laboratories, Lucent Technologies | 論文
- Modeling and Simulation of Tunneling Current in MOS Devices Including Quantum Mechanical Effects (Special lssue on SISPAD'99)
- Significance of the high-latitude geomagnetic index AES-80 : comparison with the PC index
- The Vertical Replacement-Gate (VRG) MOSFET : A High-Performance Vertical MOSFET with Lithography-Independent Critical Dimensions
- Effects of Degree of Dissociation on Aluminum Etching in High-Density Cl_2 Plasmas
- Ultra-High Capacity 40-Gb/s WDM Systems (Joint Special Issue on Recent Progress in Optoelectronics and Communications)
- Air Entrapment from a Highly Distorted Free Surface
- Implantation and Annealing Strategies for Ultra-Shallow Junction Formation
- High Speed InP-Based ICs for a Fiber-to-Microwave Link